HYM721010GS-60
1M × 72-Bit Dynamic RAM Module (ECC
- Module)
HYM 721000GS-60/-70 HYM 721010GS-60/-70
Advanced Information
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1 048 576 words by 72-bit ECC
- mode organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 10890 m W active (-60 version) max. 9900 m W active (-70 version) CMOS
- 451 m W standby TTL
- 550 m W standby
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CAS-before-RAS refresh, RAS-only-refresh 18 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL patible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes eighteen 1M × 4 -DRAMs in TSOPII-packages and four Bi CMOS 8-bit buffers/line drivers 74ABT244 Two versions: HYM 721000GS with TSOPII-ponents...
