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HYS64V16220GU-10 - 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module

General Description

Module Height 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ 1.25“ PC100-222-620 L-DIM-168-30 100 MHz 8M × 64 1 bank SDRAM module PC100-222-620 L-DIM-168-30 100 MHz 8M × 72 1 bank SDRAM module PC100-222-620 L-DIM-168-30 100 MHz 16M × 64 2 bank SDRAM module PC100-222-620 L-DIM-168-30 100 MHz

Key Features

  • standard version ICC6 1 1 mA 1 Semiconductor Gr.

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Full PDF Text Transcription for HYS64V16220GU-10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYS64V16220GU-10. For precise diagrams, and layout, please refer to the original PDF.

3.3 V 8M × 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M × 64/72-Bit 2 Bank SDRAM Module 168 pin unbuffered DIMM Modules HYS 64/72V8200GU HYS 64/72V16220GU • 168 Pin PC100-comp...

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d DIMM Modules HYS 64/72V8200GU HYS 64/72V16220GU • 168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 8M × 64, 8M × 72 and 2 bank 16M × 64, 16M × 72 organization Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification SDRAM Performance -8 -8B 100 6 -10 66 8 Units MHz ns • • • • • fCK tAC • Clock frequency (max.) Clock access time 100 6 Programmed Latencies Product Speed -8 -8B -10 PC100 PC100 PC66 CL 2 3 2 tRCD 2 2 2 tRP 2 3 2 • • Single + 3.3 V (± 0.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
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HYS64V16220GU-8B 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
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