Siemens HYS64V2200GU-8-3
The HYS64(72)2200 and HYS64(72)4220 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 2M x 64, 2M x 72 in 1 bank and 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use -8 speed sort 2M x 8 SDRAM devices in TSOP44 packages to meet the PC100 requirement. The PC board design is according to INTELs’ PC SDRAM Rev.1.0 module specification.| Part No. | HYS64V2200GU-8-3 |
|---|---|
| Datasheet | HYS64V2200GU-8-3 Download |
| Manufacturer |  Siemens |
| Description | 168 pin unbuffered DIMM |
| Buy | Stock & Price |
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10
● 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
● 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
● Optimized for byte-write non-parity or ECC applications
● JEDEC standard Synchronous DRAMs (SDRAM)
● Fully PC board layout compatible to INTELs’ Rev. 1.0 module specification
● SDRAM Performance: fCK Clock frequency (max.) tAC Clock access time
● Programmed Latencies : -8 -8-3 -10 100 100 66 6 6 8 Units MHz ns Product Speed CL -8 PC100 2 -8-3 PC100 3 -10 PC66 2 tRCD tRP 2 2 2 3 2 2
● Single +3.3V(± 0.3V ) power supply
● Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
● Auto Refresh (CBR) and Self Refresh
● Decoupling capacitors mounted on substrate
● All inputs, outputs are LVTTL compatible
● Serial Presence Detect with...
● 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications
● 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
● Optimized for byte-write non-parity or ECC applications
● JEDEC standard Synchronous DRAMs (SDRAM)
● Fully PC board layout compatible to INTELs’ Rev. 1.0 module specification
● SDRAM Performance: fCK Clock frequency (max.) tAC Clock access time
● Programmed Latencies : -8 -8-3 -10 100 100 66 6 6 8 Units MHz ns Product Speed CL -8 PC100 2 -8-3 PC100 3 -10 PC66 2 tRCD tRP 2 2 2 3 2 2
● Single +3.3V(± 0.3V ) power supply
● Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
● Auto Refresh (CBR) and Self Refresh
● Decoupling capacitors mounted on substrate
● All inputs, outputs are LVTTL compatible
● Serial Presence Detect with...
