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HYS64V2200GU-8-3 - 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

General Description

Module Height 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ L-DIM-168-29 100 Mhz 2M x 64 1 bank SDRAM module L-DIM-168-29 100 MHz 2M x 72 1 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 64 2 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 72 2 bank SDRAM module L-DIM-168-29 100

Key Features

  • 10 SDRAM-Modules AC Characteristics 3)4) TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3.

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Full PDF Text Transcription for HYS64V2200GU-8-3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYS64V2200GU-8-3. For precise diagrams, and layout, please refer to the original PDF.

3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC10...

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IMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’ s Rev. 1.0 module specification SDRAM Performance: -8 fCK tAC Clock frequency (max.) Clock access time 100 6 -8-3 100 6 -10 66 8 Units MHz ns • • • • • • Programmed Latencies : Product Speed -8 -8-3 -10 PC100 PC100 PC66 CL 2 3 2 tRCD 2 2 2 tRP 2 3 2 • • Si

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