HYS64V4120GU-10 Datasheet | Siemens Semiconductor Group

3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64V4120GU-10 HYS72V4120GU-10 - 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications Fully PC66 layout patible JEDEC standard Synchronous DRAMs (SDRAM) Performance: -10 f CK t AC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3 - - - - - - - Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL patible Serial Presence Detect with E 2PROM Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages 4096 refresh cycles every 64 ms Gold contact pad Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU - - - - - - - -...