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HYS64V4200GU-8B - 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module

General Description

100 Mhz 4M x 64 1 bank SDRAM module 100 MHz 4M x 72 1 bank SDRAM module 100 Mhz 8M x 64 2 bank SDRAM module 100 MHz 8M x 72 2 bank SDRAM module 100 Mhz 4M x 64 1 bank SDRAM module 100 Mhz 8M x 64 2 bank SDRAM module 66 Mhz 4M x 64 1 bank SDRAM module 66 MHz 4M x 72 1 bank SDRAM module 66 Mhz 8M x 6

Key Features

  • C100-323 -10 PC66 Unit Note min. max. min. max. min. max. Clock and Clock Enable Clock Cyc.

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Full PDF Text Transcription for HYS64V4200GU-8B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYS64V4200GU-8B. For precise diagrams, and layout, please refer to the original PDF.

3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64(72)V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin u...

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64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation Optimized for byte-write non-parity and ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification SDRAM Performance: -8 fCK tAC Clock frequency (max.) Clock access time 100 6 -8B 100 6 -10 66 8 Units MHz ns • • • • • • Programmed Latencies : Product Speed -8 -8B -10 PC100 PC100 PC66 CL 2 3 2 tRCD 2 2 2 tRP 2 3 2 • • Single +3.3V(± 0.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
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