• Part: HYS64V4200GU-8B
  • Description: 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
  • Manufacturer: Siemens Semiconductor Group
  • Size: 76.09 KB
Download HYS64V4200GU-8B Datasheet PDF
Siemens Semiconductor Group
HYS64V4200GU-8B
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64(72)V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules - 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation Optimized for byte-write non-parity and ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout patible to INTEL’s Rev. 1.0 module specification SDRAM Performance: -8 f CK t AC Clock frequency (max.) Clock access time 100 6 -8B 100 6 -10 66 8 Units MHz ns - - - - - - Programmed Latencies : Product Speed -8 -8B -10 PC100 PC100 PC66 CL 2 3 2 t RCD 2 2 2 t RP 2 3 2 - - Single +3.3V(± 0.3V ) power supply Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave) Auto Refresh (CBR) and Self Refresh Decoupling capacitors mounted on substrate All inputs, outputs are LVTTL patible Serial Presence Detect with E2PROM Utilizes 4M x16...