Siemens LD261
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
| Part No. | LD261 |
|---|---|
| Datasheet | LD261 Download |
| Manufacturer |  Siemens |
| Description | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| Buy | Stock & Price |
FEATURES
q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81APPLICATIONS
q Miniature photointerrupters q Punched tape readers q Industrial electronics q For control and drive circuits Typ Type LD 261 LD 261-5 Bestellnummer Ordering Code Q62703-Q395 Q62703-Q67 Gehäuse Package Leiterbandgehäuse, klares Epoxy-Gießharz, linsenförmig im 2.54-mm-Raster (1/10’’), Kathodenkennzeichnung: Nase am Lötspieß Lead frame, transparent epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10’’), cathode marking: projection at solder lead Semiconductor Group 1 1997-11-01 feo06021 LD 261 Grenzwerte (TA = 25 °C)MAXIMUM RATINGS
BezeichnungDESCRIPTION
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Ther...
