Siemens PZT2222
NPN Silicon Switching Transistors
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 110 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values PZT 2222 PZT 2222 A 30 60 5 40 75 6 600 1.5 150 – 65 … + 150 Unit V mA W ˚C 87 27 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 PZT 2222 PZT 2222 AELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 PZT 2222 PZT 2222 A Collector-base breakdown voltage IC = 10 µA, IB = 0 PZT 2222 PZT 2222 A Emitter-base breakdown voltage IE = 10 µA, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150 ˚C Emitter-base cutoff current...