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SFH401 - GaAs Infrared Emitter

Download the SFH401 datasheet PDF. This datasheet also covers the SFH400 variant, as both devices belong to the same gaas infrared emitter family and are provided as variant models within a single manufacturer datasheet.

General Description

SFH 401: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 400, SFH 402: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0

Key Features

  • q Fabricated in a liquid phase epitaxy process q Cathode is electrically connected to the case q High reliability q SFH 400: Same package as SFH 216 q SFH 401: Same package as BPX 43, BPY 62 q SFH 402: Same package as BPX 38, BPX 65.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SFH400_SiemensSemiconductorGroup.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) ø0.45 0.91.1 Radiant Sensitive area 1.10.9 ø4.8 ø4.6 2.54mm spacing ø5.6 ø5.3 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g GEO06314 2.54 mm spacing ø4.8 ø4.6 ø0.45 welded 14.5 12.5 (2.7) Chip position 0.91.1 5.3 5.0 glass 6.4 lens 5.6 Approx. weight 0.35 g Anode = SFH 481 Cathode = SFH 401 1.10.9 (package) ø5.6 ø5.3 GET06091 SFH 400 SFH 401 SFH 402 fet06090 fet06091 ø4.8 ø4.6 0.91.1 2.54 spacing 5.5 Chip position (2.7) 5.0 ø0.45 Radiant sensitive area 1.10.9 14.5 5.3 12.5 5.0 Cathode (SFH 402, BPX 65) Anode (SFH 482) Approx. weight 0.5 g ø5.6 ø5.