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SFH401 Datasheet Gaas Infrared Emitter

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) ø0.45 0.91.1 Radiant Sensitive area 1.10.9 ø4.8 ø4.6 2.54mm spacing ø5.6 ø5.3 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g GEO06314 2.54 mm spacing ø4.8 ø4.6 ø0.45 welded 14.5 12.5 (2.7) Chip position 0.91.1 5.3 5.0 glass 6.4 lens 5.6 Approx. weight 0.35 g Anode = SFH 481 Cathode = SFH 401 1.10.9 (package) ø5.6 ø5.3 GET06091 SFH 400 SFH 401 SFH 402 fet06090 fet06091 ø4.8 ø4.6 0.91.1 2.54 spacing 5.5 Chip position (2.7) 5.0 ø0.45 Radiant sensitive area 1.10.9 14.5 5.3 12.5 5.0 Cathode (SFH 402, BPX 65) Anode (SFH 482) Approx. weight 0.5 g ø5.6 ø5.3 GET06013 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • q Fabricated in a liquid phase epitaxy process q Cathode is electrically connected to the case q High reliability q SFH 400: Same package as SFH 216 q SFH 401: Same package as BPX 43, BPY 62 q SFH 402: Same package as BPX 38, BPX 65.

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