SGB30N60
SGB30N60 is Fast S-IGBT manufactured by Siemens Semiconductor Group.
Preliminary data
SGP30N60, SGB30N60, SGW30N60
Fast S-IGBT in NPT-Technology
- 75 % lower Eoff pared to previous generation
- Short circuit withstand time 10 µs
- Designed for moderate and high frequency applications:
- SMPS and PFC up to 150 k Hz
- Inverter, Motor controls
- NPT-Technology for 600V applications offers:
- tighter parameter distribution
- higher ruggedness, temperature stable behaviour
- parallel switching capability bined with low conduction losses
Type SGP30N60 SGB30N60 SGW30N60
600 V
30 A
VCE(sat)
2.5 V
Tj
Package TO-263AB TO-247AC
Ordering Code Q67041-A4713-A2 Q67041-A4713-A3 Q67040-S4237
150 °C TO-220AB
Maximum Ratings Parameter Collector-emitter voltage DC collector current Symbol Value 600 41 30 Unit V A
VCE IC
T C = 25 °C T C = 100 °C
Pulsed collector current, tp limited by T jmax Gate-emitter voltage Avalanche energy, single pulse
ICpuls VGE EAS
112 ±20 165 V m J
I C = 30 A, VCC = 50 V, R GE = 25 Ω, start at T j = 25 °C Short circuit withstand time Power dissipation
1) tsc Ptot Tj , Tstg
10 250 -55...+150...
