SGP02N60 Datasheet | Siemens Semiconductor Group

Preliminary data IGBT - Low forward voltage drop - High switching speed - Low tail current - Latch-up free - Avalanche rated Type SGP02N60 VCE 600V IC 2A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 100 °C Avalanche energy, single pulse IC = 2 A, VCC = 50 V, RGE = 25 Ω L = 1.5 m H, Tj = 25 °C Power dissipation TC = 25 °C Package TO-220 AB Symbol VCE VCGR VGE IC ICpuls Ptot Pin 1 G Pin 2 C Pin 3 E Ordering Code Q67040-A . . . . Values 600 600 ± 20 5.5 2 11 4 Unit V A m J W Semiconductor Group Apr-07-1998 Preliminary data Maximum Ratings Parameter Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, junction -...