Datasheet4U Logo Datasheet4U.com

2SB166100MA - LOW IR SCHOTTKY BARRIER DIODE CHIPS

Download the 2SB166100MA datasheet PDF. This datasheet also covers the 2SB166100MA_SilanMicroelectronicsJoint variant, as both devices belong to the same low ir schottky barrier diode chips family and are provided as variant models within a single manufacturer datasheet.

General Description

Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction fo

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB166100MA_SilanMicroelectronicsJoint-stock.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB166100MA
Manufacturer Silan Microelectronics Joint-stock
File Size 41.00 KB
Description LOW IR SCHOTTKY BARRIER DIODE CHIPS
Datasheet download datasheet 2SB166100MA Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB1664 PNP Epitaxial Planar Silicon Darlington Transistor Sanyo Semicon
2SB1667 Silicon PNP Transistor Toshiba Semiconductor
2SB1667 Silicon PNP Triple Diffused Type Transistor Guangdong Kexin Industrial
2SB1668 Power Transistor Rohm
2SB1669 PNP Transistor INCHANGE

Other Datasheets by Silan Microelectronics Joint-stock

Part Number Description
2SB166040ML SCHOTTKY BARRIER DIODE CHIPS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SB166100MA 2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1660µm X 1660µm; Chip Thickness: 280±20µm; Have two top side electrode materials for customer to choose, detail refer to ordering specifications.