033R5NT Overview
Description
The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.
Key Features
- 180A, 30V, RDS(on)(typ.)=2.8m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 1 23 TO-220-3L
