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035R5NMJ - 30V N-CHANNEL MOSFET

This page provides the datasheet information for the 035R5NMJ, a member of the 035R5ND 30V N-CHANNEL MOSFET family.

Datasheet Summary

Description

The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 100A, 30V, RDS(on)(typ. )=4.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet preview – 035R5NMJ

Datasheet Details

Part number 035R5NMJ
Manufacturer Silan Microelectronics
File Size 364.67 KB
Description 30V N-CHANNEL MOSFET
Datasheet download datasheet 035R5NMJ Datasheet
Additional preview pages of the 035R5NMJ datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVT035R5ND(MJ)(T)_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems. FEATURES  100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 1 3 23 1.Gate 2.Drain 3.
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