035R5NMJ Description
The SVT035R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in the fields of uninterruptible power supplies and power management of inverter systems.
035R5NMJ Key Features
- 100A, 30V, RDS(on)(typ.)=4.0m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability