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11N65FJHD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

General Description

SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 11A,650V, RDS(on)(typ. )=0.33@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJH-3L.

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Datasheet Details

Part number 11N65FJHD2
Manufacturer Silan Microelectronics
File Size 264.96 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet 11N65FJHD2 Datasheet

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Silan Microelectronics SVS11N65FJHD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS11N65FJHD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s Super Junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example. it is suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  11A,650V, RDS(on)(typ.)=0.