2KG037075NJL Datasheet | Silan Microelectronics

2KG037075NJL MON CATHODE DOUBLE DICE SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG037075NJL is a mon cathode double dice switching diode fabricated in planar technology. Ø The parameters of diode match well due to double dice on the same chip substrate. Ø Optimized graph design suit for encapsulation bonding, and the interference is very small between two dice. Ø The top electrodes material is Al, and the back-side electrodes material is Au. Ø Chip size: 0.37 X 0.37 (mm)2. 2KG037075NJL CHIP TOPOGRAPHY 2KG037075NJL ELECTRICAL CHARACTERISTICS (TJ=25°C) Characteristics Forward Voltage Reverse Voltage Reverse Current Diode Capacitance Reverse Recovery Time Symbol VF VBR IR Cd trr IF=10m A. IF=100m A. IB=100µA. VR=20V. VR=75V. f=1MHz; VR=0. When switched from I F=10m A to VR=6V; RL=100Ω; measured at --4 ns IR=1m A. Note The electrical characteristic is single dice value. .. Test Conditions Min. -0.62 100 ---Typ. -0.9 120 --1.9 Max. 1.0 1.2 -25 5 4 Unit V V V n A µA p F HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: .silan..cn REV:1.0 2007.04.20 Page 1 of...