2SB030070MLJY Overview
Description
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:300µm X 300µm; Chip Thickness: 155±20µm Chip Topography and Dimensions La: Chip Size:300µm; Lb: Pad Size: 150µm; ORDERING SPECIFICATIONS Product Name 2SB030070MLJY Specification For Au and AlSi wire bonding package Ø Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 70 70 1 125 -40~125 Unit V mA A °C °C Parameters Reverse Voltage Forward Voltage Symbol VBR VF Test Conditions IR=8µA IF=1.0mA IF=10mA IF=15mA Reverse Current IR VR=50V VR=70V --Min. 0.40 0.71 0.95 0.08 8 V Unit V µA HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: REV:1.0 2007.10.15 Page 1 of 1.
