Datasheet4U Logo Datasheet4U.com

2SB035030MLJY - 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS

General Description

Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power

📥 Download Datasheet

Datasheet Details

Part number 2SB035030MLJY
Manufacturer Silan Microelectronics
File Size 39.39 KB
Description 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
Datasheet download datasheet 2SB035030MLJY Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SB0709A Silicon PNP epitaxial planar type Transistor Panasonic Semiconductor
2SB0710 Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor
2SB0710A Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor
2SB0766 Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor
2SB0766A Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor

Other Datasheets by Silan Microelectronics

Part Number Description
2SB035100ML 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
2SB030070MLJY 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
2SB139040ML SCHOTTKY BARRIER DIODE
2SB139060ML SCHOTTKY BARRIER DIODE
2SB139100MA LOW IR SCHOTTKY BARRIER DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SB035030MLJY 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB035030MLJY is a schottky barrier diode chips Lb La fabricated in silicon epitaxial planar technology; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:350µm X 350µm; Chip Thickness: 155±20µm Chip Topography and Dimensions La: Chip Size: 350µm; Lb: Pad Size: 300µm; ORDERING SPECIFICATIONS Product Name 2SB035030MLJY Specification For Au and AlSi wire bonding package Ø ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Sur