3VD156600YL
Overview
¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. ¾ Avalanche Energy Specified. ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60SS. ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 1.6mm*1.54mm. ¾ Chip Thickness: 300±20μm. CHIP TOPOGRAPHY ¾ Top metal: Al, Backside Metal : Ag.
