3VD156600YL - HIGH VOLTAGE MOSFET CHIPS

Silan Microelectronics

General Description

¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.

¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

¾ Avalanche Energy Specified.

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3VD156600YL high voltage mosfet chips by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	3VD156600YL
Manufacturer	Silan Microelectronics
File Size	101.12 KB
Description	HIGH VOLTAGE MOSFET CHIPS
Datasheet	3VD156600YL Datasheet

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3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. ¾ Avalanche Energy Specified. ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60SS. ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 1.6mm*1.54mm. ¾ Chip Thickness: 300±20μm. CHIP TOPOGRAPHY ¾ Top metal: Al, Backside Metal : Ag.