3VD182600YL
Overview
Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60C.
