Datasheet Details
| Part number | 3VD182600YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 45.88 KB |
| Description | HIGH VOLTAGE MOSFET CHIPS |
| Datasheet | 3VD182600YL_SilanMicroelectronics.pdf |
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Overview: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS.
| Part number | 3VD182600YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 45.88 KB |
| Description | HIGH VOLTAGE MOSFET CHIPS |
| Datasheet | 3VD182600YL_SilanMicroelectronics.pdf |
|
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Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60C.
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