3VD186600YL
Overview
¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60. ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ Die size: 1.96mm*1.78mm. ¾ Chip Thickness: 300±20μm. CHIP TOPOGRAPHY 1-Gate PAD 3-Source PAD 1 3 ¾ Top metal : Al, Backside Metal : Ag.
