3VD186600YL Overview
¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability. ¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60.