Datasheet Details
| Part number | 3VD186600YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 114.84 KB |
| Description | HIGH VOLTAGE MOSFET CHIPS |
| Datasheet | 3VD186600YL_SilanMicroelectronics.pdf |
|
|
|
Overview: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS.
| Part number | 3VD186600YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 114.84 KB |
| Description | HIGH VOLTAGE MOSFET CHIPS |
| Datasheet | 3VD186600YL_SilanMicroelectronics.pdf |
|
|
|
¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced voltageblocking capability.
¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60.
| Part Number | Description |
|---|---|
| 3VD186700YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD182600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD156600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD499650YL | HIGH-VOLTAGE MOSFET |