Datasheet Details
| Part number | 3VD186700YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 102.79 KB |
| Description | HIGH VOLTAGE MOSFET CHIPS |
| Datasheet | 3VD186700YL_SilanMicroelectronics.pdf |
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Overview: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS.
| Part number | 3VD186700YL |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 102.79 KB |
| Description | HIGH VOLTAGE MOSFET CHIPS |
| Datasheet | 3VD186700YL_SilanMicroelectronics.pdf |
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¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70.
| Part Number | Description |
|---|---|
| 3VD186600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD182600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD156600YL | HIGH VOLTAGE MOSFET CHIPS |
| 3VD499650YL | HIGH-VOLTAGE MOSFET |