3VD186700YL
Overview
¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70.
