3VD499650YL - HIGH-VOLTAGE MOSFET

Silan Microelectronics

General Description

¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable

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3VD499650YL high-voltage mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	3VD499650YL
Manufacturer	Silan Microelectronics
File Size	123.12 KB
Description	HIGH-VOLTAGE MOSFET
Datasheet	3VD499650YL Datasheet

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3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; The chips may packaged in TO-220 type and the typical equivalent product is 12N65; The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers; ¾ ¾ Die size: 5.66mm*4.4mm; Chip Thickness: 300±20μm; Top metal: Al, Backside Metal: Ag.