3VD499650YL datasheet by Silan Microelectronics.
| Part number | 3VD499650YL |
|---|---|
| Datasheet | 3VD499650YL_SilanMicroelectronics.pdf |
| File Size | 123.12 KB |
| Manufacturer | Silan Microelectronics |
| Description | HIGH-VOLTAGE MOSFET |
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¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified;.
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