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3VD499650YL - HIGH-VOLTAGE MOSFET

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Part number 3VD499650YL
Manufacturer Silan Microelectronics
File Size 123.12 KB
Description HIGH-VOLTAGE MOSFET
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¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable
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