3VD499650YL
Overview
¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; Avalanche Energy Specified; Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; The chips may packaged in TO-220 type and the typical equivalent product is 12N65; The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers; ¾ ¾ Die size: 5.66mm*4.4mm; Chip Thickness: 300±20μm; Top metal: Al, Backside Metal: Ag.
