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7N70DD2 - 700V SUPER JUNCTION MOS POWER TRANSISTOR

Download the 7N70DD2 datasheet PDF. This datasheet also covers the 7N70FD2 variant, as both devices belong to the same 700v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L.
  • 7A, 700V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 1 23 TO-251J-3L 1 23 TO-220F-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (7N70FD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 7N70DD2
Manufacturer Silan Microelectronics
File Size 384.89 KB
Description 700V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet 7N70DD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
7N70FD2 700V SUPER JUNCTION MOS POWER TRANSISTOR
7N70MJD2 700V SUPER JUNCTION MOS POWER TRANSISTOR
7N70SD2 700V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVS7N70F/D/MJ/S/D2_Datasheet 7A, 700V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L  7A, 700V, RDS(on)(typ.)=0.