7N70DD2 Datasheet | Silan Microelectronics

DESCRIPTION SVS7N70F(D)(MJ)(S)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L 1 3 TO-263-2L - 7A, 700V, RDS(on)(typ.)=0.52@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 1 23 TO-251J-3L 1 23 TO-220F-3L ORDERING INFORMATION Part No. SVS7N70FD2 SVS7N70DD2TR SVS7N70MJD2 SVS7N70SD2 Package TO-220F-3L TO-252-2L TO-251J-3L TO-263-2L Marking 7N70FD2 7N70DD2 7N70MJD2 7N70SD2 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Packing Type Tube Tape&reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.2 Page 1 of 9 Silan Microelectronics SVS7N70F/D/MJ/S/D2_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current...