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P10N60CA - 600V N-CHANNEL MOSFET

Download the P10N60CA datasheet PDF. This datasheet also covers the P10N60CAFJ variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Key Features

  • 2 1 3 1.Gate 2.Drain 3.Source 12 3 1 TO-220FJ-3L 2 3 TO-220FJH-3L.
  • 10A, 600V, RDS(on)(typ. )=0.60@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P10N60CAFJ-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P10N60CA
Manufacturer Silan Microelectronics
File Size 287.07 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet P10N60CA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVFP10N60CAFJ/FJH_Datasheet 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 12 3 1 TO-220FJ-3L 2 3 TO-220FJH-3L  10A, 600V, RDS(on)(typ.)=0.