SGM820PB8B3TFM Datasheet | Silan Microelectronics

SGM820PB8B3TFM Datasheet 820A, 750V IGBT MODULE 1.DESCRIPTION SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it Features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions. 2. Features - Based on fine trench FS-V technology, blocking voltage up to 750V - Low VCE(sat) with positive temperature coefficient - Low switching loss - Low Qg and Cres - Using DBC with excellent thermal conductivity - Built-in NTC...