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SGT15U65SD1F - 650V FIELD STOP IGBT

General Description

The SGT15U65SD1F(FD) field stop IGBT adopts Silan Field Stop IV+ technology,

Key Features

  • low conduction loss and switching loss, is applicable to UPS, SMPS, motor.

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Datasheet Details

Part number SGT15U65SD1F
Manufacturer Silan Microelectronics
File Size 286.77 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGT15U65SD1F Datasheet

Full PDF Text Transcription (Reference)

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Silan Microelectronics SGT15U65SD1F(FD)_Datasheet 15A, 650V FIELD STOP IGBT DESCRIPTION The SGT15U65SD1F(FD) field stop IGBT adopts Silan Field Stop IV+ technology, features low conduction loss and switching loss, is applicable to UPS, SMPS, motor application and PFC fields. FEATURES  15A, 650V, VCE(sat)(typ.)=1.6V@IC=15A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 12 123 TO-220FD-3L TO-220F-3L NOMENCLATURE IGBT series SGT 15 U 65 S D 1 F Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V ORDERING INFORMATION Part No.