SGT20T60SD1P7 Datasheet | Silan Microelectronics

DESCRIPTION The SGT20T60SD1F(S)(P7)(FD)(PN)(T) field stop IGBT adopts Silan the 3th-generation trench Field Stop technology, features low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc. It is applicable to inverters, UPS, SMPS, and PFC. FEATURES - 20A, 600V, VCE(sat)(typ.)=1.65V@IC=20A - Low conduction loss - Fast switching speed - High breakdown voltage C 2 1 G TO-3P TO-263-2L 12 3 TO-220F-3L 1 23 TO-220FD-3L 1 2 3 TO-220-3L 1 23 TO-247-3L NOMENCLATURE IGBT series SGT 20 T 60 S D 1 P7 Current, 50: 20A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 Voltage, 60: 600V 120: 1200V Package P7 : TO-247-3L 1,2,3 : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range D : Packaged with fast recovery diode R : RC IGBT Empty:Single IGBT chip C : Si C diode L : Ultra low switching, remended frequency ~2KHz Q : Low switching, remended frequency2~20KHz S : Standard frequency, remended frequency5~40KHz F : Fast switching, remended frequency10~60KHz UF : Ultra fast switching, remended frequency 40KHz~ I : IGNITION HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.5 Page 1 of 12 Silan Microelectronics SGT20T60SD1F(S)(P7)(FD)(PN)(T)_Datasheet ORDERING INFORMATION Part No. SGT20T60SD1F SGT20T60SD1S SGT20T60SD1STR SGT20T60SD1P7 SGT20T60SD1FD SGT20T60SD1PN SGT20T60SD1T Package TO-220F-3L TO-263-2L TO-263-2L TO-247-3L...