SGT20T60SDM1P7
Description
The SGT20T60SDM1P7 field stop IGBT adopts Silan the 4th-generation trench Field Stop technology, features low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc.
Key Features
- 20A, 600V, VCE(sat)(typ.)=1.7V@IC=20A Low conduction loss Fast switching speed High breakdown voltage
