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SGT20T60SDM1P7 - 600V FIELD STOP IGBT

Download the SGT20T60SDM1P7 datasheet PDF. This datasheet also covers the SGT20T60SDM1P7-SilanMicroelectronics variant, as both devices belong to the same 600v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

The SGT20T60SDM1P7 field stop IGBT adopts Silan the 4th-generation trench Field Stop technology,

Key Features

  • low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc. It is applicable to inverters, UPS, SMPS, and PFC.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGT20T60SDM1P7-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGT20T60SDM1P7
Manufacturer Silan Microelectronics
File Size 261.86 KB
Description 600V FIELD STOP IGBT
Datasheet download datasheet SGT20T60SDM1P7 Datasheet

Other Datasheets by Silan Microelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGT20T60SDM1P7_Datasheet 20A, 600V FIELD STOP IGBT DESCRIPTION The SGT20T60SDM1P7 field stop IGBT adopts Silan the 4th-generation trench Field Stop technology, features low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc. It is applicable to inverters, UPS, SMPS, and PFC. FEATURES  20A, 600V, VCE(sat)(typ.)=1.7V@IC=20A  Low conduction loss  Fast switching speed  High breakdown voltage C 2 1 G 3 E 1 23 TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N: N Channel NE: N-channel planar gate with ESD T: Field Stop 3/4 U: Field Stop 4+ V: Field Stop 5 W: Field Stop 6 X: Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 20 T 60 S D M 1 P7 Package P7: TO-247-3L F: TO-220F-3L 1,2,3… : Version No.