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SGT50T65SDM1P7 - 650V FIELD STOP IGBT

General Description

The SGT50T65SDM1P7 adopts Field Stop III IGBT technology,

Key Features

  • low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc. It is applicable to inverters, UPS, SMPS, and PFC.

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Datasheet Details

Part number SGT50T65SDM1P7
Manufacturer Silan Microelectronics
File Size 276.25 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGT50T65SDM1P7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGT50T65SDM1P7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGT50T65SDM1P7 adopts Field Stop III IGBT technology, features low conduction loss and switching loss, positive temperature coefficient, easy parallel operation, etc. It is applicable to inverters, UPS, SMPS, and PFC. FEATURES  50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A  Low conduction loss  Fast switching speed  High breakdown voltage C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 50 T 65 S D M 1 P7 Package P7 : TO-247-3L F: TO-220F-3L 1,2,3… : Version No.