SGT50T65SDM1P7 Description
The SGT50T65SDM1P7 adopts Field Stop III IGBT technology,.
SGT50T65SDM1P7 Key Features
- 50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A
- Low conduction loss
- Fast switching speed
- High breakdown voltage
- Part: SGT50T65SDM1P7
- Manufacturer: Silan Microelectronics
- Size: 276.25 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SGT50T65FD1P7 | 650V FIELD STOP IGBT |
| SGT50T65FD1PN | 650V FIELD STOP IGBT |
| SGT50T65FD1PS | 650V FIELD STOP IGBT |
| SGT50T65FD1PT | 650V FIELD STOP IGBT |
| SGT10U60SDM2D | 600V FIELD STOP IGBT |