SGT50T65SDM1P7 Overview
The SGT50T65SDM1P7 adopts Field Stop III IGBT technology,.
SGT50T65SDM1P7 Key Features
- 50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A
- Low conduction loss
- Fast switching speed
- High breakdown voltage
Datasheet Details
| Part number | SGT50T65SDM1P7 |
|---|---|
| Datasheet | SGT50T65SDM1P7-SilanMicroelectronics.pdf |
| File Size | 276.25 KB |
| Manufacturer | Silan Microelectronics |
| Description | 650V FIELD STOP IGBT |
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