SGT60N60FD1PN - 600V FIELD-STOP IGBT

Silan Microelectronics

General Description

SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application.

Key Features

60A, 600V,VCE(sat)(typ. )=2.2V@IC=60A.
Low conduction loss.
Fast switching.
High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN.

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SGT60N60FD1PN 600v field-stop igbt by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SGT60N60FD1PN
Manufacturer	Silan Microelectronics
File Size	303.49 KB
Description	600V FIELD-STOP IGBT
Datasheet	SGT60N60FD1PN Datasheet

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Other Datasheets by Silan Microelectronics

Part Number	Description
SGT60N60FD1P7	600V FIELD-STOP IGBT
SGT60N60FD1PS	600V FIELD-STOP IGBT
SGT60N60FD1PT	600V FIELD-STOP IGBT
SGT60N60FD1	600V FIELD-STOP IGBT
SGT60U65FD1P7	650V FIELD STOP IGBT

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 60 N 60 F D 1 P7 Package P7 : TO-247-3L 1,2,3… : Version No.