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SGTQ120V65SDB1PW - 650V FIELD STOP IGBT

Description

The SGTQ120V65SDB1PW field stop IGBT adopts Silan Field Stop 5 technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

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Datasheet Details

Part number SGTQ120V65SDB1PW
Manufacturer Silan Microelectronics
File Size 628.53 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ120V65SDB1PW Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGTQ120V65SDB1PW_Datasheet 120A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ120V65SDB1PW field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  120A, 650V, VCE(sat)(typ.)=1.42V@IC=120A  Low conduction loss  Fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 1 23 TO-247P-3L NOMENCLATURE IGBT series Automotive Current, 120: 120A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ X : Field Stop 6 Y : Field Stop 7 SGT Q 120 V 65 S D B 1 PW Voltage, 65: 650V 120: 1200V Package PW : TO-247P-3L 1,2,3 : Version No.
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