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SGTQ40T120SDB2P7 - 1200V FIELD STOP IGBT

Description

The SGTQ40T120SDB2P7 field stop IGBT adopts Silan Trench Field Stop IV technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic，UPS, SMPS and PFC fields.

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Datasheet Details

Part number SGTQ40T120SDB2P7
Manufacturer Silan Microelectronics
File Size 440.87 KB
Description 1200V FIELD STOP IGBT
Datasheet download datasheet SGTQ40T120SDB2P7 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGTQ40T120SDB2P7_Datasheet 40A, 1200V FIELD STOP IGBT DESCRIPTION The SGTQ40T120SDB2P7 field stop IGBT adopts Silan Trench Field Stop IV technology. It features low conduction loss and switching loss, is applicable to photovoltaic，UPS, SMPS and PFC fields. FEATURES  AEC-Q101 qualified  40A, 1200V, VCE(sat)(typ.)=1.75V@IC=40A  Low conduction loss  Fast switching  High input impedance  TJmax。=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE SGT Q 40 V 120 F D B 2 P7 IGBT series Automotive Current, 40: 40A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 75: 750V 120: 1200V Package P7: TO-247-3L 1,2,3 : Version No.
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