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SGTQ40V65SDB2S7 - 650V FIELD STOP IGBT

Download the SGTQ40V65SDB2S7 datasheet PDF (SGTQ40V65SDB2S7-SilanMicroelectronics included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v field stop igbt.

Description

The SGTQ40V65SDB2S7 field stop IGBT adopts Silan Field Stop 5 technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGTQ40V65SDB2S7-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGTQ40V65SDB2S7
Manufacturer Silan Microelectronics
File Size 548.96 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ40V65SDB2S7 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGTQ40V65SDB2S7_Datasheet 40A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ40V65SDB2S7 field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  40A, 650V, VCE(sat)(typ.)=1.35V@IC=40A  Low conduction loss  Fast switching  High input impedance  TJmax=175C 1 G C Tab 2 3~7 E Tab 1 7 TO-263-7L NOMENCLATURE SGT Q 40 V 65 S D B 2 S7 IGBT series Automotive Current, 40: 40A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 34 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ X : Field Stop 6 Y : Field Stop 7 Voltage, 65: 650V 120: 1200V Package S7 : TO-263-7L 1,2,3 : Version No.
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