Datasheet4U Logo Datasheet4U.com

SGTQ50T65SDM1P7 - 650V FIELD STOP IGBT

Description

The SGTQ50T65SDM1P7 field stop IGBT adopts Silan Field Stop III technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

📥 Download Datasheet

Datasheet Details

Part number SGTQ50T65SDM1P7
Manufacturer Silan Microelectronics
File Size 537.79 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ50T65SDM1P7 Datasheet

📁 Similar Datasheet

  • SGT03U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
  • SGT06U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
  • SGT080R70ILB - 700V 29A PowerGaN transistor (STMicroelectronics)
  • SGT105R70ILB - 700V 21.7A e-mode PowerGaN transistor (STMicroelectronics)
  • SGT10T60SD1F - 600V FIELD STOP IGBT (Silan Semiconductors)
  • SGT10T60SD1S - 600V FIELD STOP IGBT (Silan Semiconductors)
  • SGT10U60SDM2D - 600V FIELD STOP IGBT (Silan Semiconductors)
  • SGT120R65AL - PowerGaN transistor (STMicroelectronics)
  • SGT23B13 - Unidirectional Transient Surge Suppressors (Harris)
  • SGT23U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SGTQ50T65SDM1P7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ50T65SDM1P7 field stop IGBT adopts Silan Field Stop III technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  AEC-Q101 qualified  50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A  Low conduction loss  Fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Automotive Current, 50: 50A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 Voltage, 65: 650V 120: 1200V SGT Q 50 T 65 S D M 1 P7 Package P7: TO-247-3L 1,2,3 : Version No.
Published: |