Datasheet4U Logo Datasheet4U.com

SGTQ50V65UF1S7 - 650V FIELD STOP IGBT

Description

The SGTQ50V65UF1S7 field stop IGBT adopts Silan Field Stop 5 technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

📥 Download Datasheet

Datasheet Details

Part number SGTQ50V65UF1S7
Manufacturer Silan Microelectronics
File Size 512.47 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ50V65UF1S7 Datasheet

📁 Similar Datasheet

  • SGT03U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
  • SGT06U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
  • SGT080R70ILB - 700V 29A PowerGaN transistor (STMicroelectronics)
  • SGT105R70ILB - 700V 21.7A e-mode PowerGaN transistor (STMicroelectronics)
  • SGT10T60SD1F - 600V FIELD STOP IGBT (Silan Semiconductors)
  • SGT10T60SD1S - 600V FIELD STOP IGBT (Silan Semiconductors)
  • SGT10U60SDM2D - 600V FIELD STOP IGBT (Silan Semiconductors)
  • SGT120R65AL - PowerGaN transistor (STMicroelectronics)
  • SGT23B13 - Unidirectional Transient Surge Suppressors (Harris)
  • SGT23U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SGTQ50V65UF1S7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ50V65UF1S7 field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  50A, 650V, VCE(sat)(typ.)=1.75V@IC=50A  Low conduction loss  Fast switching  High input impedance  TJmax=175C 1 G C Tab 2 3~7 E Tab 1 7 TO-263-7L NOMENCLATURE IGBT series Automotive Current, 50: 50A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 34 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 SGT Q 50 V 65 UF Voltage, 65: 650V 120: 1200V 1 S7 Package S7 : TO-263-7L 1,2,3 : Version No.
Published: |