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SGTQ75V65FDB1P7 - 650V FIELD STOP IGBT

Download the SGTQ75V65FDB1P7 datasheet PDF (SGTQ75V65FDB1P7-SilanMicroelectronics included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650v field stop igbt.

Description

The SGTQ75V65FDB1P7 field stop IGBT adopts Silan Field Stop 5 technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS, and PFC fields.

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Note: The manufacturer provides a single datasheet file (SGTQ75V65FDB1P7-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGTQ75V65FDB1P7
Manufacturer Silan Microelectronics
File Size 413.86 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ75V65FDB1P7 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGTQ75V65FDB1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ75V65FDB1P7 field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  Tjmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Automotive Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT Q 75 V 65 F D B 1 P7 Package P7: TO-247-3L 1,2,3… : Version No.
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