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SGTQ75V65FDB2P7 - 650V FIELD STOP IGBT

Description

The SGTQ75V65FDB2P7 field stop IGBT adopts Silan Field Stop 5 technology.

Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

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Datasheet Details

Part number SGTQ75V65FDB2P7
Manufacturer Silan Microelectronics
File Size 630.80 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ75V65FDB2P7 Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SGTQ75V65FDB2P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ75V65FDB2P7 field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Automotive Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 34 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 7 SGT Q 75 V 65 F D B 2 P7 Voltage, 65: 650V 120: 1200V Package P7：TO-247-3L 1,2,3 : Version No.
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