STS65R280DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Product Overview

Silan Microelectronics

Part number	STS65R280DS2
Manufacturer	Silan Microelectronics
File Size	581.00 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	STS65R280DS2 Datasheet
Note	This datasheet PDF includes multiple part numbers: STS65R280DS2, STS65R280DS2-SilanMicroelectronics. Please refer to the document for exact specifications by model.
Additional preview pages of the STS65R280DS2 datasheet.

STS65R280D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

14A, 650V, RDS(on)(typ. )=0.24@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L 13 TO-252-2L 12 3 TO-220F-3L KEY.

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Published: Mar 19, 2025 |