SVD1N80F Datasheet | Silan Microelectronics

SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. TO-251-3L TO-220F-3L 1 3 1.Gate 2.Drain 3.Source TO-220-3L 2 Features ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.5Ω@VGS...