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SVD830T - 500V N-CHANNEL MOSFET

General Description

SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

Key Features

  • ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet Details

Part number SVD830T
Manufacturer Silan Microelectronics
File Size 678.67 KB
Description 500V N-CHANNEL MOSFET
Datasheet download datasheet SVD830T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVD830T/F/D_Datasheet 4.5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD830T/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 4.5A,500V,RDS(on(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No.