SVD9Z24NT Datasheet | Silan Microelectronics

DESCRIPTION SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. This device is widely used in push-pull amplifier, high-side switching circuit, CMOS power amplifier. 1 3 1.Gate 2.Drain 3.Source FEATURES - -12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V - P channel - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No. SVD9Z24NT Package TO-220-3L Marking SVD9Z24N Harzardous Substance Control Pb free Packing Type Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above...