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SVF10N65F - 650V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF10N65F, a member of the SVF10N65T 650V N-CHANNEL MOSFET family.

Description

SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 10A,650V,RDS(on)(typ. )=0.80@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 TO-220-3L 123 TO-262-3L 123 TO-220F-3L 1 3 TO-263-2L.

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Datasheet preview – SVF10N65F

Datasheet Details

Part number SVF10N65F
Manufacturer Silan Microelectronics
File Size 308.52 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N65F Datasheet
Additional preview pages of the SVF10N65F datasheet.

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,650V,RDS(on)(typ.)=0.80@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.
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