SVF13N50CFJ Overview
Description
SVF13N50CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 13A, 500V, RDS(on)(typ.)= 0.44@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability 2 1 3 12 3 TO-220FJ-3L
