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SVF3N80F - 800V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF3N80F, a member of the SVF3N80M 800V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 3A, 800V, RDS(on)(typ. )=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet preview – SVF3N80F

Datasheet Details

Part number SVF3N80F
Manufacturer Silan Microelectronics
File Size 608.65 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF3N80F Datasheet
Additional preview pages of the SVF3N80F datasheet.

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SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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