SVF730MJ Datasheet | Silan Microelectronics

SVF730F/T/M/MJ_Datasheet 6A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF730F/T/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 6A, 400V, RDS(on)（typ）=0.66@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVF730T SVF730F SVF730M SVF730MJ Package TO-220-3L TO-220F-3L TO-251D-3L TO-251J-3L Marking SVF730T SVF730F SVF730M SVF730MJ Hazardous Substance Control Pb free Pb free Halogen free Halogen free Packing Tube Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.8 Page 1 of 10 SVF730F/T/M/MJ_Datasheet...