SVF7N60F Datasheet | Silan Microelectronics

SVF7N60F/S/D_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60F/S/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 7A, 600V, RDS(on)（typ）=0.96@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVF7N60F SVF7N60S SVF7N60STR SVF7N60DTR Package TO-220F-3L TO-263-2L TO-263-2L TO-252-2L Marking SVF7N60F SVF7N60S SVF7N60S SVF7N60D TO-252-2L 1.Gate 2.Drain 3.Source 1 23 TO-220F-3L 1 3 TO-263-2L Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Packing Tube Tube Tape & Reel Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:3.2 Page 1 of 10 SVF7N60F/S/D_Datasheet...