SVG062R8NL5
DESCRIPTION
SVG062R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems.
FEATURES
- 140A, 60V, RDS(on)(typ.)=2.4m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Extreme dv/dt rated
- 100% avalanche tested
- Pb-free lead plating
- Ro HS pliant
S1 S2 S3 G4
8D 7D 6D 5D
8 7 6 5
65 87
4 23 1
1 32 4
PDFN-8-5X6X0.95-1.27
KEY PERFORMANCE PARAMETERS
Characteristics VDS
VGS(th) RDS(on),max
ID Qg.typ
Ratings 60
2.5~3.5 2.8 140 48
Unit V V m A n C
ORDERING INFORMATION
Part No. SVG062R8NL5TR
Package PDFN-8-5X6X0.95-1.27
Marking 062R8NL5
Hazardous Substance Control
Halogen free
Packing Type Tape & Reel
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