SVS11N60FJD2 Description
SVS11N60D/F/S/FJ/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
SVS11N60FJD2 Key Features
- 11A,600V, RDS(on)(typ.)=0.3@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rated
- High peak current capability