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SVS12N80FJ Datasheet 800v Dp Mos Power Transistor

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 12A,800V, RDS(on)(typ. )=0.37@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L.

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